|
週次 |
日期 |
單元主題 |
|
第1週 |
9/16 |
Course Introduction
History and Background
Advances in magnetism in late the 20thCentury
New magnetic devices |
|
第2週 |
9/23 |
Basic Electronmagnetism
Introduction;
Magnetic force; poles and fields;
Magnetic dipoles;
Ampere's circuital Law;
Biot-Savart Law;
Magnetic moments
Magnetic dipolar energy;
Magnetic Flux;
Magnetic Induction;
Classical Maxwell equations of electomagnetism;
Inductance
|
|
第3週 |
9/30 |
Magnetism and magnetic material (I)
Origin of magnetism (spin; orbital; spin-orbit coupling);
Introduction of magnetic materials (dia-; para-; ferro; anti-ferro; ferri-magnet);
Ferromagnet/antiferromagnet bilayer structure;
Interlayer exchnage coupling in ferromagnet/metal/ferromagnet multilayer (RKKY interaction; Neel coupling);
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|
第4週 |
10/07 |
Magnetism and magnetic material (II)
Anisotropy energy: (Crystalline; interface/surface; Exchange energy; Zeeman energy)
In-plane film and perpendicular film;
Magnetization Dynamics (precession);
|
|
第5週 |
10/14 |
Properties of Magnetic nano-structures
Edge pole and demagnetizing field;
magnetic domains, domain wall, curling, vortex, C/S-state;
magnetization behavior under an external field;
Stoner-Walfarth model;
Switching behavior, switching threshold field;
magnetization behavior of a synthetic anti-ferromagnetic film stack
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|
第6週 |
10/21 |
Magneto-resistance effects
Hall effects;
AMR;
GMR;
TMR, MTJ;
|
|
第7週 |
10/28 |
Field-write mode MRAM
Field MTJ RAM cell;
read signal;
write bit cell with magnetic field;
Astroid-mode MRAM;
Toggle-mode MRAM;
Characterization method of MRAM chip write performance;
Thermally assisted field write;
Multi-transistor cells
|
|
第8週 |
11/04 |
Magnetization dynamics, spin-magnetization interactions
Magnetization dynamics, LLG equation;
Ferromagnetic resonance;
Interaction between polarized free electrons and Magnetization
Macrospin model;
Spin-torque Transfer properties of spin valve;
Spin-torque Transfer properties of MTJ;
Spin current, spin pumping, accumulation, and effective damping
|
|
第9週 |
11/11 |
Spin-torque transfer mode MRAM (I)
Spin transfer mode MRAM cell;
Spin-transfer torque and switching threshold current density;
Stochastic property of magnetic switching;
Abnormal switching behavior;
Tunnel barrier reliability;
|
|
第10週 |
11/18 |
Spin-torque transfer mode MRAM (II)
Circuit model; memory cell operation; read-write operation window;
Data retention;
Thermal stability of STT memory chip;
|
|
第11週 |
11/25 |
Other switching modes MRAM
Current-driven domain wall motion mode –physics, devices
VCAM mode –physics, application to memory devices
Precession mode -physics, devices
Spin Hall effect mode – physics, devices
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|
第12週 |
12/02 |
Apparatus principles; memory chip design, statistics, error handling
Film/memory device characterization and apparatus
Apparatus principles;
VSM – working principle
MOKE – working principle
CIPT – working principle
TDDB;
Data retention;
memory chip design; statistics; error handling |
|
第13週 |
12/09 |
Magnetoresistive sensor
Introduction to theory
Hall effect
AMR
GMR
TMR
Schematic & circuitry: GMR as an example
Microfabrication
Applications
|
|
第14週 |
12/16 |
Applications of magnetic tunnel junction technology
Memory landscape;
standalone memory;
Embedded in CMOS SoC;
Endurance vs data retention requirement
In TCAM, FPGA, other embedded applications
Chip power management;
Nv Logic;
RF oscillator (ST)
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|
第15週 |
12/23 |
HDD, Spin-FET, Hall/Spin Hall devices/RF oscillator/logic elements
Hard Disk Drive
HDD, evolution;
Recording medium;
Sensors and write head;
Electronics;
Mn:GaAs
Logic devices
RF oscillator (ST)
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|
第16週 |
12/30 |
break: team design projects |
|
第17週 |
1/06 |
Students Projects Presentation, team leader report |
|
第18週 |
1/13 |
Summary week |